vishay siliconix sum90n10-8m2p document number: 74643 s-71690-rev. a, 13-aug-07 www.vishay.com 1 n-channel 100-v (d-s) mosfet features ? trenchfet ? power mosfets ? 175 c junction temperature ? 100 % r g and uis tested applications ? power supply - secondary synchronous rectification ? industrial ? primary switch product summary v (br)dss (v) r ds(on) ( )i d (a) q g (typ) 100 0.0082 at v gs = 10 v 90 d 97 to-263 s d g top view orderin g information: s um90n10- 8 m2p-e 3 (le a d (p b )-free) n-channel mosfet g d s notes: a. duty cycle 1 %. b. see soa curve for voltage derating. c. when mounted on 1" square pcb (fr-4 material). d. package limited. absolute maximum ratings t c = 25 c, unless otherwise noted parameter symbol limit unit drain-source voltage v ds 100 v gate-source voltage v gs 20 continuous drain current (t j = 175 c) t c = 25 c i d 90 d a t c = 70 c 90 d pulsed drain current i dm 240 avalanche current i as 60 single avalanche energy a l = 0.1 mh e as 180 mj maximum power dissipation a t c = 25 c p d 300 b w t a = 25 c c 3.75 operating junction and storage temperature range t j , t stg - 55 to 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient (pcb mount) c r thja 40 c/w junction-to-case (drain) r thjc 0.5 rohs complian t
www.vishay.com 2 document number: 74643 s-71690-rev. a, 13-aug-07 vishay siliconix sum90n10-8m2p notes: a. pulse test; pulse width 300 s, duty cycle 2 %. b. guaranteed by design, not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 100 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 2.5 4.5 gate-body leakage i gss v ds = 0 v, v gs = 20 v 250 na zero gate voltage drain current i dss v ds = 100 v, v gs = 0 v 1 a v ds = 100 v, v gs = 0 v, t j = 125 c 50 v ds = 100 v, v gs = 0 v, t j = 150 c 250 on-state drain current a i d(on) v ds 10 v, v gs = 10 v 70 a drain-source on-state resistance a r ds(on) v gs = 10 v, i d = 20 a 0.0067 0.0082 v gs = 10 v, i d = 20 a, t j = 125 c 0.0127 0.0170 forward transconductance a g fs v ds = 15 v, i d = 20 a 62 s dynamic b input capacitance c iss v gs = 0 v, v ds = 50 v, f = 1 mhz 6290 pf output capacitance c oss 535 reverse transfer capacitance c rss 182 total gate charge c q g v ds = 50 v, v gs = 10 v, i d = 85 a 97 150 nc gate-source charge c q gs 32 gate-drain charge c q gd 25 gate resistance r g f = 1 mhz 1.4 2.8 tu r n - o n d e l ay t i m e c t d(on) v dd = 50 v, r l = 0.588 i d ? 85 a, v gen = 10 v, r g = 1 23 35 ns rise time c t r 17 26 turn-off delay time c t d(off) 34 52 fall time c t f 918 source-drain diode ratings and characteristics (t c = 25 c) b continuous current i s 85 a pulsed current i sm 240 forward voltage a v sd i f = 30 a, v gs = 0 v 0.85 1.5 v reverse recovery time t rr i f = 75 a, di/dt = 100 a/s 61 100 ns peak reverse recovery current i rm(rec) 3.0 4.5 a reverse recovery charge q rr 91 130 c
vishay siliconix sum90n10-8m2p document number: 74643 s-71690-rev. a, 13-aug-07 www.vishay.com 3 typical characteristics 25 c, unless otherwise noted output characteristics transfer characteristics on-resistance vs. drain current 0 20 40 60 8 0 100 120 012 3 45 v d s - dr a in-to- s o u rce volt a ge (v) v g s = 10 thr u 7 v - dr a in c u rrent (a) i d 6 v 5 v 0 20 40 60 8 0 100 0246 8 10 v g s - g a te-to- s o u rce volt a ge (v) - dr a in c u rrent (a) i d t c = 25 c t c = - 55 c t c = 125 c 0.006 3 0.0065 0.0067 0.0069 0.0071 0.007 3 0204060 8 0 100 i d - dr a in c u rrent (a) - on-re s i s t a nce ( ) r d s (on) v g s = 10 v transconductance on-resistance vs. gate -to-source voltage capacitance 0 3 0 60 90 120 150 1 8 0 01224 3 64 8 60 i d - dr a in c u rrent (a) - tr a n s cond u ct a nce ( s ) g f s t c = 25 c t c = 125 c t c = - 55 c v g s - g a te-to- s o u rce volt a ge (v) 0.00 0.01 0.02 0.0 3 0.04 0.05 4.0 5.2 6.4 7.6 8 . 8 10.0 - on-re s i s t a nce ( ) r d s (on) i d = 20 a t a = 150 c t a = 25 c c r ss 0 1600 3 200 4 8 00 6400 8 000 0 204060 8 0100 v d s - dr a in-to- s o u rce volt a ge (v) c - c a p a cit a nce (pf) c i ss c o ss
www.vishay.com 4 document number: 74643 s-71690-rev. a, 13-aug-07 vishay siliconix sum90n10-8m2p typical characteristics 25 c, unless otherwise noted on-resistance vs. junction temperature gate charge source-drain diode forward voltage 0.5 1.0 1.5 2.0 2.5 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temper a t u re (c) v g s = 10 v (norm a lized) - on-re s i s t a nce r d s (on) i d = 20 a 0 2 4 6 8 10 0 224466 88 110 - g a te-to- s o u rce volt a ge (v) q g - tot a l g a te ch a rge (nc) v g s v d s = 3 0 v v d s = 70 v i d = 8 5 a v d s = 50 v 1.0 1.2 0.001 10 100 0 0.2 0.4 0.6 0. 8 t j = 25 c v s d - s o u rce-to-dr a in volt a ge (v) - s o u rce c u rrent (a) i s 1 0.1 0.01 t j = 150 c threshold voltage drain source breakdown vs. junction temperature maximum drain current vs. case temperature t j - temper a t u re (c) - 2. 3 - 1. 8 - 1. 3 - 0. 8 - 0. 3 0.2 0.7 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a v a ri a nce (v) v g s (th) i d = 5 ma 100 106 112 11 8 124 1 3 0 - 50 - 25 0 25 50 75 100 125 150 175 t j - j u nction temper a t u re (c) (norm a lized) v (br)d ss i d = 1 ma 0 2 8 56 8 4 112 140 0 25 50 75 100 125 150 t c - c as e temper a t u re (c) - dr a in c u rrent (a) i d p a ck a ge limited
vishay siliconix sum90n10-8m2p document number: 74643 s-71690-rev. a, 13-aug-07 www.vishay.com 5 typical characteristics 25 c, unless otherwise noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?74643. single pulse avalanche current capability vs. time t av ( s ec) (a) i dav 100 10 1 t j = 25 c t j = 150 c 10 - 3 10 -2 1 10 -1 10 -4 10 -5 safe operating area 0.1 1 10 100 0.1 100 t c = 25 c s ingle p u l s e - dr a in c u rrent (a) i d 1 1000 10 10 m s 100 m s dc 1 m s 100 s *limited b y r d s (on) v d s - dr a in-to- s o u rce volt a ge (v) *v g s minim u m v g s a t which r d s (on) i ss pecified normalized thermal transient impedance, junction-to-case 1 0.1 0.01 0.2 0.05 d u ty cycle = 0.5 squa re w a ve p u l s e d u r a tion ( s ec) norm a lized effective tr a n s ient therm a l imped a nce s ingle p u l s e 0.1 10 - 3 10 -2 1 10 -1 10 -4 0.02
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